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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION With TO-3PL package Complement to type 2SD1975 Wide area of safe operation High transition frequency fT Optimum for the output stage of a Hi-Fi audio amplifier APPLICATIONS For high power amplification PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2SB1317 Fig.1 simplified outline (TO-3PL) and symbol Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 150 150 -55~150 ae ae CONDITIONS Open emitter Open base Open collector VALUE -180 -180 -5 -15 -25 3.5 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-10A ;IB=-1A IC=-8A ; VCE=-5V VCB=-180V; IE=0 VEB=-3V; IC=0 IC=-20mA ; VCE=-5V IC=-1A ; VCE=-5V IC=-8A ; VCE=-5V IC=-0.5A ; VCE=-5V;f=1MHz IE=0;f=1MHz;VCB=-10V 20 60 20 MIN 2SB1317 SYMBOL VCEsat VBE ICBO IEBO hFE-1 hFE-2 hFE-3 fT COB TYP. MAX -2.5 -1.8 -50 -50 UNIT V V |I |I A A 200 20 450 MHz pF hFE-2 classifications Q 60-120 S 80-160 P 100-200 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1317 Fig.2 Outline dimensions (unindicated tolerance:A 0.50 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1317 4 |
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